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TT: Fachverband Tiefe Temperaturen
TT 55: Multiferroic Oxide Thin Films and Heterostructures I (joint session KFM/TT/MA)
TT 55.9: Talk
Wednesday, March 14, 2018, 12:00–12:15, EMH 225
Investigation of a-domain formation in Pb(Zr,Ti)O3 thin films — •Niranjan Ramakrishnegowda1,2, Yeseul Yun1,2, Daesung Park1,2, and Akash Bhatnagar1,2 — 1Zentrum für Innovationskompetenz SiLi-nano, Halle (Saale), Germany — 2Martin Luther Universität Halle-Wittenberg, Halle (Saale), Germany
Strain engineering of ferroelectric/ferroelastic domains is an active area of research nowadays, as it provides an exotic pathway to tune the resultant properties of ferroic materials. Since the domains can be also ferroelastic, the extent of strain, applied via the substrate-film lattice parameter mismatch, can be used to define the domain width, orientation and position. However, the persistence of the strain across the thickness of the film is largely affected by growth related process parameters.
In the case of Pb(Zr,Ti)O3, one of the most widely investigated ferroelectric, recent studies involving asymmetric substrates allowed to fine tune the nucleation of a-domains, and the associated domain wall thickness. The proposed prerequisite condition of afilm< asubstrate < cfilm was satisfied. In this work we attempt to further analyze this condition by growing PZT films on symmetric SrTiO3 substrates. The role of depolarization field was evaluated by the use of conductive oxide layers sandwiched between the film and the substrate. The usually neglected contribution of target density and purity will be also elaborated.