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TT: Fachverband Tiefe Temperaturen
TT 66: Spintronics (joint session MA/TT)
TT 66.5: Talk
Wednesday, March 14, 2018, 16:00–16:15, EB 202
p-type co-doping effect in III-Mn-V dilute ferromagnetic semiconductors — •Chi Xu1, 2, Ye Yuan1, 2, Mao Wang1, 2, Roman Böttger1, Manfred Helm1, 2, and Shengqiang Zhou1 — 1Helmholtz-Zentrum Dresden Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden, Germany — 2Technische Universität Dresden, D-01062 Dresden, Germany
III-Mn-V based diluted magnetic semiconductors offer an opportunity to explore various aspects of carrier transport in the presence of cooperative phenomena. In this work, we demonstrate the efficiency of an alternative approach to control the carrier state through involving one magnetic impurity Mn and one electrically active dopant Zn. Mn-doped and Zn co-doped Ga-V films have been prepared by combining ion implantation and pulsed laser melting, followed by a systematic investigation on the magnetic and transport properties of (Ga,Mn)P by varying Mn concentration as well as by Zn co-doping. Changes of electrical, magnetic and magneto-transport behavior of the investigated Ga-Mn-V films were observed after co-doping with Zn. The changes are caused by interstitial Mn atoms which are transferred from substitutional sites or formation of Mn-Zn dimers.