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TT: Fachverband Tiefe Temperaturen

TT 69: Multiferroic Oxide Thin Films and Heterostructures II (joint session KFM/TT/MA)

TT 69.5: Talk

Wednesday, March 14, 2018, 16:15–16:45, EMH 225

Multiferroic and magnetoelectric nanocomposites for data processing — •Wolfgang Kleemann — Physics Department, University Duisburg-Esssen, 47048 Duisburg, Germany

Switching of magnetism with electric fields and magnetic control of electric polarization are challenging tasks for multiferroic and magneto-electric materials. Various composite realizations appear most promising for data processing applications: (1) We propose 2-2 nanocomposites based on magnetoelectric (ME) chromia (111) films (Cr2O3), which allow electric switching of the magnetization of epitaxially grown ultrathin ferromagnetic Co/Pt/Co trilayers via interfacial exchange bias. Random access memory (MERAM) and logic cell MEXOR have been approved [1]. (2) Regular 2-1 composites of magnetostrictive cobalt ferrite (CoFe2O4) nanopillars are PLD-grown in a piezoelectric film of barium titanate (BaTiO3). In a transverse magnetic field they exert a staggered shear stress-induced surface polarization pattern in the BaTiO3 environment [2]. Possible data storage applications will be discussed. (3) Ceramic 0-3 composites of antiferromagnetic-ferroelectric Bi(Fe,Co)O3 nanoclusters embedded in K0.5Bi0.5TiO3 reveal giant linear magneto-electric response via bilinear piezo-magneto-electric coupling, M = αE with α = 10-5 s/m [3]. They are candidates for future electrically addressable nanodot mass memory devices. [1] US Pat. 7,719,883 B2 (2010). [2] Nature Comm. 4, 2051 (2013). [3] Adv. Funct. Mater. 26, 2111 (2016).