Berlin 2018 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 71: Quantum Information Systems (joint session HL/TT)
TT 71.5: Talk
Wednesday, March 14, 2018, 16:00–16:15, EW 203
Microwave saturation spectroscopy of silicon vacancies in SiC — •Victor Soltamov1, Christian Kasper1, Georgy V. Astakhov1, Sergej A. Tarasenko2, Alexander V. Poshakinskiy2, Andrey N. Anisimov2, Pavel G. Baranov2, and Vladimir Dyakonov1,3 — 1Experimental Physics VI, Julius Maximilian University of Würzburg, 97074 Würzburg — 2Ioffe Institute, 194021 St.Petersburg, Russia — 3Bavarian Center for Applied Energy Research (ZAE Bayern), 97074 Würzburg
Negatively charged silicon vacancy (VSi) center in Silicon Carbide (SiC) has been attracting growing attention due to their use in quantum sensing with optical pumping [1]. The core of the sensing methods is to precise measurement of the optically detected magnetic resonance (ODMR) signal frequency shift, induced by the external fields. A sensitivity of the measurement improves when the VSi ground-state microwave transitions are narrow. That is why, understanding of the mechanisms responsible for inhomogeneous broadening of the ODMR line is of great importance. To establish the mechanisms we provided the study of the VSi ODMR linewidth by means of microwave saturation spectroscopy. We revealed the presence of two types of broadening namely induced by randomly distributed strain fields and by randomly distributed local magnetic fields. The results allowed deeper understanding of the VSi ground spin state properties and to propose new measurement protocols for quantum sensing with the VSi centers.
[1] H. Kraus et al., Sci. Rep. 4, 5303 (2014).