Berlin 2018 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 71: Quantum Information Systems (joint session HL/TT)
TT 71.6: Talk
Wednesday, March 14, 2018, 16:30–16:45, EW 203
Fabrication and Characterization of a Quantum Bus Prototype in Si/SiGe — •Inga Seidler1, Arne Hollmann1, Veit Langrock1, Stefan Trellenkamp2, Christian Neumann3, Dominique Bougeard3, Hendrik Bluhm1, and Lars R. Schreiber1 — 1JARA-FIT Institute for Quantum Information, RWTH Aachen University, Germany — 2Helmholtz Nano Facility, Forschungszentrum Jülich GmbH, Germany — 3Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Germany
Silicon based spin qubits in electrostatically defined quantum dots are well established and 1-qubit and 2-qubit gates are shown with high fidelities [1,2]. The missing link for building a large scale quantum computer is a long range coherent coupling mechanism. A candidate for a coupling mechanism is a 10 micron long quantum bus (QuBus), which transfers a single electron spin qubit along a 1D channel. We will present the concept of a QuBus that consists of a dense metal gate array required to appropriately shape the electrostatic potential within the channel. We optimized the fabrication yield of the three-layer metal gate pattern of the 320 nm long Si QuBus prototype. In addition, 10 mK transport measurements of a single electron transistor which operates as the charge sensor at the ends of a QuBus are shown.
[1] J. Yoneda ea., arXiv:1708.01454 [2] D. M. Zajac ea., arXiv:1708.03530