Berlin 2018 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 72: Poster Session: Correlated Electrons

TT 72.71: Poster

Mittwoch, 14. März 2018, 15:00–19:00, Poster B

Tuning the electric interface properties of amorphous AlO_x/SrTiO₃ interfaces — •Berengar Leikert¹, Judith Gabel¹, Martin Stübinger¹, Philipp Scheiderer¹, Matthias Schmitt¹, Tien-Lin Lee², Michael Sing¹, and Ralph Claessen¹ — ¹Physikalisches Institut and Röntgen Center for Complex Material Systems (RCCM) — ²Diamond Light Source, Beamline I09, Didcot, England

Two dimensional electron systems (2DESs) at the interfaces of oxide heterostructures are considered a promising platform for future microelectronic technology which may utilize the rich electronic behavior of transition metal oxides. A simple and cost-effective method to create a 2DES is to deposit Al on the surface of SrTiO₃. It reduces the first oxide layers and leads to an n-doping of the oxide surface. By changing the Al redox potential via growth in oxygen atmosphere we can tune the electronic interface properties, as probed by hard x-ray photoelectron spectroscopy of the film as well as the substrate core levels. Emission angle resolved film and core level spectra are used to determine the band bending behaviour and the sheet carrier concentration as function of growth parameters. By comparison to the spectroscopic data, transport experiments offer information on carrier trapping in this oxygen vacancy dominated material.