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TT: Fachverband Tiefe Temperaturen

TT 78: Focus Session: Spinorbitronics - From Efficient Charge/Spin Conversion Based on Spin-Orbit Coupling to Chiral Magnetic Skyrmions I (joint session MA/TT)

TT 78.5: Hauptvortrag

Donnerstag, 15. März 2018, 11:15–11:45, H 1012

Interfacial spin-orbitronic: Rashba interfaces and topological insulators as efficient spin-charge current converters — •Juan-Carlos Rojas-Sanchez — Insitut Jean Lamour, Univ. Lorraine -CNRS, Nancy, France

New materials with large efficiency of spin-charge current interconversion are highly desirable to study new physical phenomena as well as for spintronics applications. The spin-orbit coupling (SOC) in the 2DEG states at Topological Insulator (TI) or Rashba Interfaces (RI) is predicted to be more efficient than their 3D counterparts for such interconversion. We have found the highest efficiency at room temperature using the topological insulator α-Sn [1]. The spin-to-charge current conversion in such 2D systems is called Inverse Edelstein Effect (IEE), or spin galvanic effect. I will show results of spin-to-charge conversion by spin pumping experiments and their analysis in term of inverse Edelstein Length in RI TI [1-3]. Experimental results based on ARPES and spin pumping indicate that direct contact of metallic ferromagnetic layer is detrimental for the surfaces states of topological insulators but we can keep the surfaces states of α-Sn using Ag spacer [1]. I will use the conversion parameter obtained at room temperature with α-Sn to demonstrate the very large advantage of the SOC effects in 2D interface states with respect to the Spin Hall Effect (SHE) of 3D metals and the resulting perspective for low power spintronic devices.

[1]J.-C. R-S et al. PRL 116, 096602 (2016). [2]J.-C. R-S et al. Nat. Comm 4, 2943 (2013). [3]E. Lesne, J.-C. R-S et al. Nat. Mat. 15, 1261 (2016).