Berlin 2018 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 80: Graphene

TT 80.13: Vortrag

Donnerstag, 15. März 2018, 12:45–13:00, H 3005

Interplay between the moiré superlattice and a npn-junction in a graphene-hBN heterostructure — •Rainer Kraft¹, Pranauv Balaji Selvasundaram^1,2, Ralph Krupke^1,2, Klaus Richter³, Ming-Hao Liu^3,4, and Romain Danneau¹ — ¹Institute of Nanotechnology, Karlsruhe Institute of Technology, Karlsruhe, Germany — ²Department of Materials and Earth Sciences, Technical University Darmstadt, Darmstadt, Germany — ³Institute for Theoretical Physics, University of Regensburg, Regensburg, Germany — ⁴Department of Physics, National Cheng Kung University, Tainan, Taiwan

Here, we present measurements on a device based on a graphene/hexagonal boron nitride van der Waals heterostructure with a moiré superlattice. The superlattice structure modulates the electronic band structure featuring interesting physics, such as new moiré minibands for Dirac electrons in graphene. With the combination of overall back-gate and local top-gate forming a npn-junction we are able to probe the effect of the superlattice by measuring complex sets of Fabry-Pérot interferences of confined charge carriers in several cavities as functions of bias or magnetic field. The decoding of the resulting interference patterns gives insight into the effects of the moiré superlattice on the band structure and as well on the nature of the cloned Dirac fermions.