Berlin 2018 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 82: Topological Insulators II (joint session TT/MA)
TT 82.12: Talk
Thursday, March 15, 2018, 12:30–12:45, A 053
Controlling the Topological Properties of Stanene by Substrate Engineering: Realistic Modelling and Experimental Approaches — •Philipp Eck1, Maximilian Bauernfeind2, Marius Will2, Domenico Di Sante1, Lenart Dudy2, Ronny Thomale1, Jörg Schäfer2, Ralph Claessen2, and Giorgio Sangiovanni1 — 1Institut für Theoretische Physik und Astrophysik, Universität Würzburg, D-97074 Würzburg — 2Physikalisches Institut and Röntgen Research Center for Complex Material Systems, Universität Würzburg, D-97074 Würzburg
Although two-dimensional (2D) group IV (C-, Si-, Ge-, Sn-) honeycomb lattices have been successfully grown on a vast number of substrates, strain, deformation and/or hybridization often destroy their topological properties. Focusing on stanene, a promising strategy is the growth on passivated SiC(0001) with a buffer layer saturating the SiC dangling bonds. We present a systematic density functional theory study of group III and V buffer layers and shed light on the buffer-stanene hybridization physics influencing the vertical stanene distance and the stanene deformation. We find for some buffer layers large equilibrium distances leading to a freestanding-stanene-like topological band structure. The theoretical study will be supported by experimental data on an Al buffer layer.