Berlin 2018 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 82: Topological Insulators II (joint session TT/MA)
TT 82.4: Vortrag
Donnerstag, 15. März 2018, 10:15–10:30, A 053
Spectroscopy of 1D Edge States and Rashba-Split Valence Bands in Bismuthene on SiC(0001) — •Felix Reis1, Gang Li2,3, Raul Stühler1, Lenart Dudy1,4, Maximilian Bauernfeind1, Stefan Glass1, Werner Hanke3, Ronny Thomale3, Jörg Schäfer1, and Ralph Claessen1 — 1Physikalisches Institut and Röntgen Research Center for Complex Material Systems, Universität Würzburg, D-97074 Würzburg, Germany — 2School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China — 3Institut für Theoretische Physik und Astrophysik, Universität Würzburg, D-97074 Würzburg, Germany — 4Tempo Beamline, Synchtron Soleil, L’Orme des Merisiers, 91190 Saint-Aubin, France
Recently, the realization of bismuthene on the wide-gap substrate SiC(0001) was reported [1]. Theoretical analysis shows that Bi/SiC(0001) is a large-gap quantum spin Hall system, and demonstrates the pivotal role of the substrate not just for the stabilization of the monolayer film, but also for its topological properties.
We investigate the spectroscopic properties with scanning tunneling spectroscopy (STS), photoemission and density-functional theory. We find a characteristic Rashba-split valence band due to the inversion symmetry breaking by the substrate. A metallic density of states exists at the bismuthene film edges near substrate steps. We will report STS investigations of the narrow 1D spatial confinement, and of the metallic spectra which show a zero-bias anomaly.
F. Reis, G. Li, L. Dudy et al., Science 357, 287 (2017).