Berlin 2018 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 84: Fluctuations and Noise
TT 84.7: Vortrag
Donnerstag, 15. März 2018, 11:00–11:15, HFT-FT 131
Single-electron thermal devices coupled to a mesoscopic gate — •Rafael Sánchez1, Holger Thierschmann2, and Laurens W. Molenkamp3 — 1Universidad Autónoma de Madrid — 2Delft University of Technology — 3Universität Würzburg
Fluctuations are strong in mesoscopic systems and have to be taken into account for the description of transport. We show that they can even be used as a resource for the operation of a system as a device. We use the physics of single-electron tunneling to propose a bipartite device [1,2] working as a thermal transistor[3,4]. Charge and heat currents in a two terminal conductor can be gated by thermal fluctuations from a third terminal to which it is capacitively coupled. The gate system can act as a switch that injects neither charge nor energy into the conductor hence achieving huge amplification factors. Non-thermal properties of the tunneling electrons can be exploited to operate the device with no energy consumption.
R. Sánchez, M. Büttiker, Phys. Rev. B 83, 085428 (2011)
H. Thierschmann et al., Nature Nanotech. 10, 854 (2015)
R. Sánchez, H. Thierschmann, L. W. Molenkamp, Phys. Rev. B 95, 241401 (2017)
R. Sánchez, H. Thierschmann, L. W. Molenkamp, New J. Phys. 19, 113040 (2017)