Erlangen 2018 – wissenschaftliches Programm
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P: Fachverband Plasmaphysik
P 13: Low Pressure Plasmas - Poster
P 13.10: Poster
Dienstag, 6. März 2018, 16:15–18:15, Redoutensaal
Investigation of a low pressure microwave plasma source for high rate etching — •Steffen Riegger1, Andreas Schulz1, Matthias Walker1, Günter Tovar1, Mario Dünnbier2, and Klaus Baumgärtner2 — 1Institute of Interfacial Process Engineering and Plasma Technology IGVP, University of Stuttgart, Stuttgart, Germany — 2Muegge GmbH, Reichelsheim, Germany
Photoresists are used in the industry for lithographic processes to produce surface structures in the sub-micrometer range. After the manufacturing processes the cured photoresist must be removed. For this purpose we investigate a remote plasma source (RPS). For the etching process pure oxygen is chosen as working gas instead of halogens to prevent environmental issues. The generated oxygen radicals react with the substrate surface atoms forming gaseous molecules. To study the processes in the RPS, the plasma is spectroscopic investigated and planar etch rates as a function of different changing parameters like the microwave power were determined. High etching rates in the range of 1µ m/s can be achieved. The spectrum of the here used oxygen plasma shows the typical atomic oxygen lines (777 nm and 844 nm). Also several ion molecule bands in the UV- range between 220 nm and 390 nm of the O2+- 2nd negative system and in the visible range between 500 nm and 600 nm of the O2+- 1st negative system are seen. The areas in the RPS where the ions are generated could be determined by a UV-transparent bandpass filter. The generation of the ions correlates with the microwave coupling into the plasma source.