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Q: Fachverband Quantenoptik und Photonik

Q 24: Quantum Information (Solid State Systems)

Q 24.4: Vortrag

Montag, 5. März 2018, 17:00–17:15, K 1.020

Towards electrical detection of nearly single NV defects — •Petr Siyushev¹, Emilie Bourgeois², Fedor Jelezko¹, and Milos Nesladek² — ¹Institute for Quantum Optics, Ulm University, D-89081 Ulm, Germany — ²Institute for Materials Research, Hasselt University, B-3590 Diepenbeek, Belgium

Over the last decade, nitrogen-vacancy (NV) center in diamond has become a prominent candidate for magnetic field sensing, nanoscale NMR, and quantum information processing. However, readout of measured signals is done optically. This requires bulky systems for detection and counting photons. Implementation of realistic devices would require miniaturization of the system and preferably integration of the system into single chip for simple compatibility with existing electronics. Substitution of traditional optical readout by its electrical analog would allow realization of diamond electronic chip. Recently, we demonstrated electrical detection of electron paramagnetic resonance on ensemble of NV centers [1] as well as electrical readout of electron spin state [2]. This method is based on detection of charge carriers which are promoted to the conduction band by two-photon excitation process of NV center [3]. Although, detection of a signal from a single NV is possible, this remains challenging due to strong background produced by other impurities. Here, we show electrical detection of nearly single NV defects.

[1] E. Bourgeois et al., Nat. Commun. 6, 8577 (2015)

[2] M. Gulka et al., Phys. Rev. Applied 7, 044032 (2017)

[3] P. Siyushev et al., Phys. Rev. Lett. 110, 167402 (2013)