Erlangen 2018 – scientific programme
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Q: Fachverband Quantenoptik und Photonik
Q 29: Quantum Optics and Photonics I
Q 29.7: Talk
Tuesday, March 6, 2018, 15:30–15:45, K 0.016
Bulk-like emission of Silicon Vacancy centers in nanodiamonds after surface treatment — •Andrea Filipovski1, Lachlan Rogers2, Ou Wang1, Valery Davydov3, Viatcheslav Agafonov4, Fedor Jelezko1, and Alexander Kubanek1 — 1Institute for Quantum Optics, Ulm University, Ulm, Germany — 2Macquarie University, Sydney, Austrailia — 3Russian Academy of Science, Moscow, Russia — 4Université F. Rabelais, Tours, France
The negatively charged silicon vacancy center in diamond (SiV−) is a promising candidate for quantum repeaters in solid state, due to its indistinguishable photon emission, high Debye Waller factor and spectral stability[1]. These extraordinary optical properties have only been reported in low-strain bulk diamond[2]. However, SiV− in NDs which are favorable for integrated quantum systems, suffer from high strain resulting in large spectral instability.
Here we show bulk-like optical behavior of SiV− in NDs with diameters below 150 nm after H-Plasma treatment. We recover single SiV− with the typical 4-line fine structure, a high polarisation contrast and an inhomogeneous line width below 150 GHz with long term spectral stability. We developed a strain model consistent with our experimental data infering, for the first time, the zero-field splitting for SiV− of 47.2−0.3+0.2 GHz for the ground and 255−2+1 GHz excited state. Suprisingly, almost 50% of the investigated SiV− centers show strain values as low as best values reported for SiV− in bulk diamond[3].
[1] L. J. Rogers et al, Nat. Comm.5, 2014, [2] A. Dietrich et al, NJP, Vol. 16, 2014, [3] L. J. Rogers et al, in preparation