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Q: Fachverband Quantenoptik und Photonik
Q 40: Poster: Quantum Optics and Photonics III
Q 40.20: Poster
Dienstag, 6. März 2018, 16:15–18:15, Zelt West
Resonant excitation of defect centers in hexagonal Boron Nitride (hBN) — •Markus Bürk1, Andreas Dietrich1, Igor Ahoronovich2, Kerem Bray2, Fedor Jelezko1, and Alexander Kubanek1 — 1Insitute for Quantum Optics, Ulm University, D-89081 Ulm — 2School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
Recent experiments demonstrated resonant excitation of single defect centers in 2D-material hexagonal Boron Nitride [1]. We present our recent results on resonant excitation of different defect centers in hBN in absence of spectral diffusion or dephasing for as long as 30 s at cryogenic temperatures (4 K). Our investigations include resonant photoluminescence excitation (PLE) of single photon emitters in a wide optical range. Furthermore, we investigated the polarization properties and phonon side band features of the defects. Together with a long coherence time [2] these properties make hexagonal Boron Nitride a promising candidate for quantum optical applications like quantum repeaters.
[1] Tran, Toan Trong, et al. "Resonant excitation of quantum emitters in hexagonal boron nitride." ACS Photonics (2017).
[2]Abdi, Mehdi, et al. "Spin-mechanics with color centers in hexagonal boron nitride membranes." arXiv preprint arXiv:1704.00638 (2017).