Würzburg 2018 – scientific programme

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T: Fachverband Teilchenphysik

T 16: GRID Computing / Experimentelle Methoden I

T 16.6: Talk

Monday, March 19, 2018, 17:15–17:30, Z6 - SR 2.006

Study of breakdown voltage from current-voltage characteristic of SiPM — •Ayesha Ali, Reimund Bayerlien, Ivor Fleck, Waleed Khalid, and Ulrich Werthenbach — University Siegen

Silicon photomultipliers (SiPM) have proven to be very attractive photon- detection devices with high detection efficiency down to single-photon resolution. The SiPM features high gain, low-voltage operation, insensitivity to magnetic field and excellent timing resolution. The SiPM has acquired a proven performance in medical imaging and high energy physics. One of the basic characteristic of a SiPM is the breakdown voltage. Its calculation allows us to set the over-voltage which is the key parameter controlling the operation and opto-electronic characteristics of the detector. Other important parameters for the characterization of SiPMs are gain, dark count rate, the recovery time of the pixels, the rise and fall times of the pulses and photon detection efficiency. They all are a function of the over-voltage. The current-voltage curve and breakdown voltage of a 4x4 channel SiPM array have been studied as a function of temperature. Thermal movement of lattice atoms and electrons causes the dark count rate. Cooling the material reduces the thermal movement. Therefore, the dark count rate declines with lower temperatures and the breakdown voltage shifts towards lower values. The results of these measurements will be presented in this talk.