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T: Fachverband Teilchenphysik

T 20: Neutrinophysik I

T 20.5: Vortrag

Montag, 19. März 2018, 17:05–17:20, Z6 - SR 2.012

Characterisation of a VUV-sensitive Silicon Photomultiplier for the nEXO experiment — •Judith Schneider¹, Tobias Ziegler¹, Michael Wagenpfeil¹, Patrick Hufschmidt¹, Ako Jamil², Katharina Witzmann¹, Naomi Vogel¹, Jürgen Hößl¹, Gisela Anton¹, and Thilo Michel¹ — ¹Friedrich-Alexander-Universität Erlangen-Nürnberg, ECAP — ²Yale University

For the future nEXO experiment, about 4 m² of SiPMs will be used for the detection of the LXe VUV (vacuum ultraviolet) scintillation light at 178 nm in order to search for the neutrinoless double beta (0νββ) decay of ¹³⁶Xe. Most commercially available SiPMs are not sensitive to UV light. Besides that, SiPMs are suffering from correlated avalanches such as crosstalk and afterpulsing. In order to achieve an energy resolution of about 1 % (σ) at the Q-value of the 0νββ decay of ¹³⁶Xe at 2457.8 keV, a photon detection efficiency (PDE) of at least 15 % at 178 nm and a correlated avalanche probability of less than 20 % are required. We present the characterisation of a device capable of detecting VUV light. This includes measurements in the absence of light as well as using Xe scintillation light. We compare the results with the requirements of the nEXO experiment at −100 ^∘C.