Würzburg 2018 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

T: Fachverband Teilchenphysik

T 41: Halbleiterdetektoren / Strahlenhärte I

T 41.10: Vortrag

Dienstag, 20. März 2018, 18:45–19:00, Z6 - SR 2.010

Optimization of bias rail implementations for segmented silicon sensors — Marta Baselga, Alexander Dierlamm, Thomas Müller und •Daniel Schell — Institut für Experimentelle Teilchenphysik, Karlsruher Institut für Technologie

Bias rails are fundamental design features of segmented strip as well as pixelated silicon sensors that are necessary to distribute the ground potential from the bias ring to the implants. However, adding these rails is usually accompanied with a certain degree of efficiency loss and modification of the electric field which could result in an early breakdown of the sensor.

TCAD simulations provide a deeper insight into the process of how the electric field evolves and how charge is collected. By simulating various sensor layouts with different parameter settings an optimized design can be obtained.

This contribution summarizes an extensive simulation study looking for an optimal set of design parameters to maximize the breakdown voltage and the charge collection efficiency of the sensor. The results are complemented by measurements performed at the DESY test beam facility in Hamburg, Germany.