Würzburg 2018 – scientific programme

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T: Fachverband Teilchenphysik

T 41: Halbleiterdetektoren / Strahlenhärte I

T 41.2: Talk

Tuesday, March 20, 2018, 16:45–17:00, Z6 - SR 2.010

Direct temperature measurement of SiPMs via IV diode characteristics — •Naomi Vogel, Michael Wagenpfeil, Sebastian Schmidt, Tobias Ziegler, and Thilo Michel — Erlangen Centre for Astroparticle Physics (ECAP), Friedrich-Alexander-Universität Erlangen-Nürnberg, Erwin-Rommel-Str. 1, 91058 Erlangen

Silicon photomultipliers (SiPMs) are semiconductor photo-detectors with single-photon resolution consisting of a pixel matrix of single avalanche photodiodes operated in Geiger-mode. Several characteristic parameters of the detector, e.g. the breakdown voltage, are temperature-dependent. Therefore, knowing the precise temperature at which a SiPM is operated is crucial for all characterization efforts. We present a method using a SiPM as a thermometer by deriving its temperature directly from the diode IV-characteristics which need to be calibrated in advance in a climate chamber under controlled ambient conditions.