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T: Fachverband Teilchenphysik

T 41: Halbleiterdetektoren / Strahlenhärte I

T 41.7: Vortrag

Dienstag, 20. März 2018, 18:00–18:15, Z6 - SR 2.010

Shallow angle measurements on prototypes for the CMS Phase II pixel sensors — •Caroline Niemeyer¹, Aliakbar Ebrahimi¹, Finn Feindt¹, Erika Garutti¹, Daniel Pitzl², Jörn Schwandt¹, Georg Steinbrück¹, and Irene Zoi¹ — ¹Institute for Experimental Physics, Hamburg University, Luruper Chaussee 149, D-22761 Hamburg, Germany — ²Deutsches Elektronen-Synchrotron, Notkestraße 85, D-22607 Hamburg

For the High-Luminosity LHC the irradiation level that the detectors will have to withstand will be reaching a 1 MeV neutron equivalent fluence of 2.3 × 10¹⁶ neq/cm² and a total ionizing dose of 10 MGy at the innermost part of the CMS pixel detector. The upgraded Phase-2 Inner Tracker is designed to maintain or improve the tracking and vertexing capabilities under these high pileup and radiation conditions. Various pixel sensor designs with pixel sizes of 50 × 50 µm² and 100 × 25 µm² have been manufactured on silicon wavers with an active thickness of 150 µm. They have been bump bonded to ROC4Sens read-out chips and are evaluated at the DESY test beam facilities. The shallow angle method is used to measure the depletion depth and the charge collection efficiency as a function of the distance from the readout pixels. The edge-on method, in which the beam transverses the sensor parallel to its surface, allows for in-silicon tracking and thus to obtain the intrinsic position resolution of the silicon sensors and to study the influence of δ-electrons on the position resolution without using an external reference tracking detector. The results of these measurement methods for the new pixel sensor designs will be presented.