Würzburg 2018 – wissenschaftliches Programm

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T: Fachverband Teilchenphysik

T 5: Pixel-Detektoren I

T 5.4: Vortrag

Montag, 19. März 2018, 16:45–17:00, Philo-HS5

Characterization of a depleted monolithic active pixel sensor prototype in 130 nm Toshiba technology — •Christian Bespin, Tomasz Hemperek, Toko Hirono, Fabian Hügging, Tetsuichi Kishishita, Hans Krüger, Piotr Rymaszewski, Norbert Wermes, and Jochen Dingfelder — Physikalisches Institut der Universität Bonn

Monolithic active silicon pixel sensors using commercial CMOS technology are currently under investigation for usage in environments with high particle rates and high radiation doses as in the upcoming HL-LHC. A prototype of a depleted monolithic active pixel sensor (DMAPS) in 130 nm Toshiba technology is characterized. It consists of different flavors with a pixel pitch of 20 um and 40 um. The pixels are read out using a 3T circuit. Results from gain and noise measurements are presented together with measurements with radioactive sources and a 2.5 GeV electron beam.