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T: Fachverband Teilchenphysik

T 2: Halbleiterdetektoren I

T 2.1: Vortrag

Montag, 25. März 2019, 16:00–16:15, H02

Edge-on Measurements on Planar Pixel Sensors for the CMS Phase 2 Upgrade — •Caroline Niemeyer¹, Aliakbar Ebrahimi¹, Finn Feindt¹, Erika Garutti¹, Paolo Gunnellini¹, Daniel Pitzl², Jörn Schwandt¹, Georg Steinbrück¹, and Irene Zoi¹ — ¹Institute for Experimental Physics, Hamburg University, Luruper Chaussee 149, 22761 Hamburg — ²Deutsches Elektronen-Synchrotron, Notkestraße 85, 22607 Hamburg

In the development process of a new pixel detector for the phase 2 upgrade of CMS, several variants of new n⁺p, planar pixel sensors with pixel sizes of 50 × 50 µm² and 100 × 25 µm² and an active thickness of 150 µm have been designed and bump bonded to ROC4SENS read-out chips. 18 weeks of beam tests with sensors, irradiated up to fluences of 8×10¹⁵ neutrons/cm² have been completed at the DESY test beam facility. The edge-on method is used to measure the charge collection as a function of depth for different operating conditions and possibly trapping effects due to irradiation as the track passes the pixel cells at varying depths. The depth performance of the sensors as a function of fluence and bias voltage is then compared to simulations with Pixelav.

In this talk, edge-on measurements are presented as a function of the applied bias voltage, for irradiated and non-irradiated sensors.