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T: Fachverband Teilchenphysik

T 27: Halbleiterdetektoren II

T 27.10: Vortrag

Dienstag, 26. März 2019, 18:15–18:30, H03

Annealing and Characterization of Irradiated Low Gain Avalanche Detectors — •Moritz Wiehe^1,2, Marcos Fernández García^1,3, Michael Moll¹, Sofia Otero Ugobono^1,4, Ulrich Parzefall², and Ana Ventura Barroso⁵ — ¹CERN — ²Albert-Ludwigs Universität Freiburg — ³Universidad de Cantabria — ⁴Universidad de Santiago de Compostela — ⁵Universitat de Barcelona

Irradiated Low Gain Avalanche Detectors (LGADs) are investigated using the Transient Current Technique (TCT) and IV/CV measurements. The sensors are irradiated to a fluence of 1e14 neq/cm2. For different annealing times (at 60°C), the collected charge, the gain and the electric field profile is measured.