Aachen 2019 – wissenschaftliches Programm
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T: Fachverband Teilchenphysik
T 27: Halbleiterdetektoren II
T 27.5: Vortrag
Dienstag, 26. März 2019, 17:00–17:15, H03
Characterisation of a depleted monolithic active pixel sensor in 180 nm TowerJazz CMOS technology — Ivan Berdalovic2, •Christian Bespin1, Ivan Caicedo1, Tomasz Hemperek1, Toko Hirono1, Fabian Hügging1, Hans Krüger1, Thanusan Kugathasan2, Cesar Augusto Marin Tobon2, Konstantinos Moustakas1, Heinz Pernegger2, Piotr Rymaszewski1, Walter Snoeys2, Tianyang Wang1, Norbert Wermes1, and Jochen Dingfelder1 — 1Physikalisches Institut, Universität Bonn, Bonn, Deutschland — 2CERN, Genf, Schweiz
Monolithic active silicon pixel sensors using commercial CMOS processes are currently under investigation for the upgrade of the ATLAS pixel detector at the upcoming HL-LHC. The TJ-MonoPix chip is a depleted monolithic active pixel sensor fabricated in 180 nm TowerJazz technology using a small fill factor design. The pixel pitch is 36 µm x 40 µm and the hit information is read out using a FE-I3-like column drain architecture.
Results are presented for unirradiated and irradiated sensors from measurements with radioactive sources and testbeams with 2.5 GeV electrons.