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T: Fachverband Teilchenphysik

T 51: Halbleiterdetektoren III

T 51.3: Vortrag

Mittwoch, 27. März 2019, 16:30–16:45, H03

TCAD Simulation of High-Voltage Monolithic Active Pixel Sensors — •Annie Meneses Gonzalez, Heiko Augustin, and Andre Schoning — Physikalisches Institut, Universitat Heidelberg

The requirements for precision physics and the experimental conditions of several Particle Physics experiments lead to tight constraints for its tracker detectors. High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) implemented in a commercial 180-nm High-Voltage CMOS process are under study as the technology for the Mu3e Pixel Tracker and as a candidate for other future detector applications like the ATLAS outermost pixel layer.

Laboratory measurements and beam test with prototypes are complemented by Technology Computer Aided Design (TCAD) simulations aiming for a comprehensive understanding of the sensor behavior and charge collection process. In this work TCAD simulation results of HV-MAPS prototype sensors will be presented. These include electric field distribution, breakdown voltage, leakage current, interpixel capacitance, and transient response to minimum