Aachen 2019 – scientific programme

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T: Fachverband Teilchenphysik

T 51: Halbleiterdetektoren III

T 51.7: Talk

Wednesday, March 27, 2019, 17:30–17:45, H03

Charge Collection Efficiency Simulation of a Small Fill-Factor 180 nm Monolithic Pixel Detector — •Sinuo Zhang, Christian Bespin, Ivan Caicedo, Tomasz Hemperek, Toko Hirono, Fabian Hügging, Hans Krüger, Konstantinos Moustakas, David-Leon Pohl, Piotr Rymaszewski, Tianyang Wang, Jochen Dingfelder, and Norbert Wermes — Physikalisches Institut, University of Bonn, Nussallee 12, Bonn, Germany

For the ATLAS experiment at the HL-LHC, the innermost pixel tracking detector will be upgraded. As a potential replacement of the hybrid pixel detector, monolithic CMOS pixel detectors in 180 nm technology are developed. Such monolithic pixel detectors placed at the outer barrel layer suffer from silicon bulk damage after irradiation with the expected dose of 10¹⁵ neq/cm² that significantly enhances charge carrier trapping through impurity energy levels in the band gap. This causes a degradation in charge collection efficiencies which has been simulated with Synopsis Sentaurus TCAD by assuming effective defect levels according to the Perugia model. The obtained results revealed that enhancements of charge collection performance can be achieved by modifications of the electric field by changing biasing condition and implantation profile. The simulation results will be presented by comparing different biasing conditions, pixel geometries, and irradiation doses.