Aachen 2019 – scientific programme
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T: Fachverband Teilchenphysik
T 93: Detektorsysteme VI
T 93.5: Talk
Thursday, March 28, 2019, 17:00–17:15, H08
Testbeam results of irradiated and non-irradiated silicon strip sensors with embedded pitch adapters — Ingo Bloch2, Javier Fernández-Tejero1, Celeste Fleta1, Heiko Lacker3, •Sam Yanwing Ng3, Luise Poley4, Laura Rehnisch3, Edoardo Rossi2, Christian Scharf3, and Miguel Ullán1 — 1Centro Nacional de Microelectrónica — 2Deutsches Elektronen-Synchrotron — 3Humboldt-Universität zu Berlin — 4Lawrence Berkeley National Lab
Embedded pitch adapters (EPA) are used to adjust the bond pattern of segmented sensors to that of read-out chips. In this way the sensor geometry can be made independent of the bond pattern of the read-out chips. This can be very useful for challenging sensor geometries used in the trackers of several experiments. However, the EPA may lead to efficiency loss due to coupling to the bulk or the strip metallization.
For the high-luminosity upgrade of the ATLAS inner tracker, silicon strip sensors with EPA structures have been investigated as an approach to mitigate the challenging wire-bonding in the end-cap region. Prototype end-cap silicon strip sensors with various EPA structures have been produced by Centro Nacional de Microelectrónica (IMB-CNM, CSIC), Barcelona, Spain. A non-irradiated sensor and a sensor irradiated to Φeq=1015 neq · cm−2 with MeV protons were subjected to test beam at DESY using a 4.4 GeV electron beam with a EUDET-type pixel telescope. First results of the tracking efficiency in the region of the EPA compared to the standard sensor region as well as a study of the coupling between the EPA and the bulk will be presented.