Freiburg 2019 – scientific programme

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FM: Fall Meeting

FM 63: Poster: Enabling Technologies: Quantum Materials, Quantum Dots, Quantum Wires, Point Contacts and Superconducting Systems

FM 63.17: Poster

Wednesday, September 25, 2019, 16:30–18:30, Tents

Spectroscopy of the negatively charged tin-vacancy centre in diamond — •Dennis Herrmann¹, Johannes Görlitz¹, Morgane Gandil¹, Philipp Fuchs¹, Takayuki Iwasaki², Takashi Taniguchi³, Mutsuko Hatano², and Christoph Becher¹ — ¹Fachrichtung 7.2, (Experimentalphysik), Universität des Saarlandes, Campus E2.6, 66123 Saarbrücken, Germany — ²Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan — ³Advanced Materials Laboratory, National Institute for Material Science, 1-1 Namiki, Tsukuba, 305-0044, Japan

Colour centres in diamond have proven their suitability for applications in quantum information processing. While the nitrogen-vacancy centre (NV) offers milliseconds spin-coherence times at room temperature, the silicon-vacancy (SiV) centre shows superior optical properties such as negligible spectral diffusion and high photon emission rates into its zero phonon line. Phonon mediated effects that have been identified as the source of decoherence in the SiV centre can be supressed for the negatively charged tin-vacancy (SnV(-)) centre due to its larger ground state splitting rendering it a promising candidate for reaching long spin-coherence times already at liquid helium temperatures. We present the SnV(-) centre's optical properties such as lifetime, polarization as well as the temperature dependence of linewidth, line shift and Debye-Waller factor. Furthermore we show lifetime-limited transition linewidths and investigations on the charge state stability under resonant excitation and spectral diffusion of single centres.