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FM: Fall Meeting

FM 85: Poster: Enabling Technologies: Cavity QED

FM 85.7: Poster

Donnerstag, 26. September 2019, 16:30–18:30, Tents

Heteroepitaxial growth of GaP membrane structures on Silicon — •Muhammad Shaharukh¹, Paul Mertin², Friedhard Römer², Bernd Witzigmann², Johann Peter Reithmaier¹, and Mohamed Benyoucef¹ — ¹Institute of Nanostructure Technology and Analytics (INA),CINSaT,University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany — ²Computational Electronics and Photonics (CEP), CINSaT, University of Kassel, Germany

The growth of III-V materials on Si is quite challenging due to the lattice mismatch and incompatible thermal expansion coefficients, which leads to a high density of dislocations. Due to the low lattice mismatch, GaP has been shown to overcome these obstacles. GaAs and Si- based photonic crystal (PhC) cavity prevents the use of emitters such as molecules that typically have resonances at visible wavelengths. GaP-based PhC cavity is one of the possible candidates for coupled PhC cavity-molecule systems to generate identical single-emitters for potential applications in scalable solid-state quantum systems.

Here, we report on the growth of GaP on Si substrates as well as GaP-based membrane structures using molecular beam epitaxy. The effects of different growth parameters on the formation of GaP structure where nucleation layer acts as a virtual substrate are investigated. The design and fabrication of GaP-based PhC cavity structures are also discussed. The optical properties of the grown structures are examined by photoluminescence spectroscopy.

This work is supported by the state of Hesse in the frame of LOEWE priority project SMolBits.