München 2019 – wissenschaftliches Programm

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K: Fachverband Kurzzeit- und angewandte Laserphysik

K 3: Laser Systems I

K 3.4: Vortrag

Dienstag, 19. März 2019, 15:00–15:20, HS 3

Diode-pumped Tb³⁺-doped laser with direct emission in the visible range — •Elena Castellano-Hernández and Christian Kränkel — Zentrum für Lasermaterialien, Leibniz-Institut für Kristallzüchtung (IKZ), Berlin, Germany

We present, to the best of our knowledge, the first diode pumped laser operation of Tb³⁺-doped materials. Under pumping with an InGaN diode laser and without any nonlinear conversion steps, a Tb³⁺:LiLuF₄ laser operates at a wavelength of 542.5 nm in the green. Under 200 mW of diode pumping at 488.3 nm, we obtained 44 mW of green output with a slope efficiency with respect to the absorbed pump power of 52 %. Initial results were also obtained at 587.5 nm in the yellow.