Regensburg 2019 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

CPP: Fachverband Chemische Physik und Polymerphysik

CPP 15: Symposium SYCO of the divisions MM (leading), O, CPP, KFM and DS continued as topical session: Mechanically controlled electrical conductivity of oxides (joint session MM/CPP/O)

CPP 15.3: Talk

Monday, April 1, 2019, 16:30–16:45, H46

Generation of controlled dislocation structures in SrTiO3 and TiO2 for elucidating dislocation impact on electrical properties. — •Lukas Porz, Till Frömling, and Jürgen Rödel — Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany

Dislocations have been understood to alter numerous functional properties of ceramic materials, such as conductivity[Whitworth 1975]. Recently, modification of functional properties of oxide materials by dislocations receives much attention due to their various potentials for application[Szot 2018]. Especially the complex dislocation structure of naturally occurring dislocations makes investigations of dislocation effects difficult. Thus, disentangling the different effects of dislocations requires an ordered structure of the dislocations. So far ordered structures were primarily fabricated in bi-crystal interfaces which are often not comparable to natural dislocation arrangements.

We present a route to control the arrangement of the dislocations locally. Different slip systems can be individually introduced and an arrangement of all dislocations lying in the same set of slip planes was achieved. With identical line vectors, the dislocations connect two surfaces of a bulk sample which was shown by dark field x-ray microscopy. This well-arranged and well-understood structure of dislocations is a pre-requisite for unambiguous interpretations of detailed experiments on functional properties. The value of a controlled arrangement of dislocations is demonstrated by conductivity data along dislocation lines and across slip bands in comparison to a dislocation free reference.