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CPP: Fachverband Chemische Physik und Polymerphysik

CPP 42: Plasmonics IV (joint session O/CPP)

CPP 42.2: Vortrag

Mittwoch, 3. April 2019, 15:15–15:30, H8

Infrared nanoscopy to unravel the influence of defects in resistive switching of In₃SbTe₂ — •Niklas Eicker¹, Martin Lewin¹, Raimondo Cecchini², Sebastian Walfort¹, Matthias Wuttig¹, Martin Salinga¹, Massimo Longo², and Thomas Taubner¹ — ¹RWTH Aachen - Institute of Physics (1A) — ²CNR - IMM

Phase change materials (PCMs) exhibit at least two stable states at room temperature, one crystalline and one amorphous. Characteristically the different states show a high electrical and optical contrast which can be used for fast, energy efficient and non-volatile nano switches [1]. Thus PCMs are a promising material class for persistent memory devices like PCRAM.
Scattering-type scanning near-field optical microscopy (s-SNOM) in the infrared spectral range can be used to study the differences in local conductivity of both states [2]. Opposed to other techniques like TEM, SNOM allows to study the same system in different states without sample preparation or damaging the PCM.
To investigate the influence of defects on phase change processes in highly scaled PCM devices, we electrically contacted and switched PCM nanowires [3]. With infrared s-SNOM we revealed strong inhomogeneities, which might be linked to a reduced local conduction due to structural defects.
[ 1] M. Wuttig et al., Nat. Mater. 6, 824 (2007)
[ 2] M. Lewin et al., Appl. Phys. Lett. 107, 151902 (2015)
[ 3] S.Selmo et al., Appl. Phys. Lett. 109, 213103 (2016)