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DS: Fachverband Dünne Schichten

DS 1: Optical Analysis of Thin Films I (Reflection, Ellipsometry, Raman, IR-DUV Spectroscopy, ...

DS 1.6: Vortrag

Montag, 1. April 2019, 11:15–11:30, H32

Raman spectroscopy characterization of silicon nanoribbons on Ag(110) — •Dmytro Solonenko, Alexander Ehm, Dietrich R.T. Zahn, and Patrick Vogt — Semiconductor Physics, Chemnitz University of Technology, D-09107 Chemnitz, Germany

Silicon nanoribbons, which can be grown epitaxially on the Ag(110) surface [1], have an unexpected chain-like structure of Si pentagons, originating from the missing row arrangement of the Ag surface and the adlayer-substrate interaction [2]. Such interplay has consequences for the Si-Si bond lengths and force constants, which can be probed by Raman spectroscopy. Our Raman results reveal the mode symmetries, which are necessary to properly assign the modes of these highly anisotropic quasi-1D crystals. Furthermore, the results allow the differentiation between the two structural phases of the ribbons, i.e., single- and double-strand ribbons, and the identification of structures, which appear at the super-monolayer growth regime. The spectroscopic signatures of Si nanoribbons are compared to those of epitaxial silicene, formed on Ag(111) [3], in order to understand the fundamental principles of the Si-Ag interaction and the hybridization states of the Si atoms. The functionalization of the nanoribbons and their application are also discussed. [1] P. De Padova, et al., Nano Lett. 8, 271 (2008). [2] J. I. Cerdá, et al., Nat. Comm. 7, 13076 (2016). [3] D. Solonenko, et al., 2D Mater. 4, 015008 (2017).