Regensburg 2019 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 14: Poster
DS 14.25: Poster
Dienstag, 2. April 2019, 17:00–20:00, Poster E
Depth profiling of PEALD-AlN films based on Al2p XPS peak decomposition — •Ali Mahmoodinezhad1,2, Emilia Pozarowska1, Karsten Henkel1,2, Dieter Schmeißer1, and Jan Ingo Flege2 — 1Applied Physics and Sensor Technology, BTU Cottbus-Senftenberg — 2Applied Physics and Semiconductor Spectroscopy, BTU Cottbus-Senftenberg
AlN has remarkable properties (wide band gap, low electrical and thermal conductivity, high dielectric constant, piezoelectricity) and is attractive for (opto)electronic and sensor applications. However, high oxygen content within nitride films is always a critical issue due to the thermodynamically favorable oxidation against nitridation resulting in deteriorated materials properties. In order to clarify whether the oxidation is a surface-limited or a bulk process elemental depth profiling is essential. In this work XPS in combination with Ar+ sputtering is applied to carry out depth profiling of AlN films prepared by plasma-enhanced atomic layer deposition using different parameters (plasma source, power and pulse duration). Particularly, the Al2p core levels are analyzed where the signals are decomposed into four components, representing weaker contributions of pure AlN and aluminum oxide phases as well as stronger signals of mixed oxygen-rich and nitrogen-rich phases. After sputtering (providing access to the deeper part of the film) the pure AlN phase content increases while the pure aluminum oxide content stays relatively constant. These issues are discussed with regard to the preparation parameters employed and accompanying XRD and electrical measurements.