Regensburg 2019 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 14: Poster

DS 14.26: Poster

Dienstag, 2. April 2019, 17:00–20:00, Poster E

Formation and characterization of Si-QDs in annealed Si/SiNx and Si/SiO2 multilayers — •Rostislav Medlín, Pavel Calta, Pavol Šutta, and Marie Netrvalová — New Technologies Research Centre, UWB Pilsen, Univerzitní 8, 306 14, Czech Republic

Si quantum dots (Si-QDs) embedded in dielectric matrix have attracted much attention for the applications in fields such as data storages or optoelectronics. In this work we performed a detailed comparative study of the structural, optical and photoluminescent properties of Si-QDs formed in annealed Si/SiNx and Si/SiO2 multilayers. Samples have been grown by means of PECVD with a substrate temperature of 250°C using silane, nitrogen and nitrous oxide as precursor gases and post-annealed between 600-1100°C. TEM, XRD, Raman, FT-IR, UV-Vis and PL techniques were used to characterize the prepared superlattices. The dependences of the photoluminescence, structural and chemical bonding characteristics of Si-QDs on the dielectric barrier material and thickness were investigated. The cross-section TEM, XRD and Raman measurements confirms the formation of Si-QD in the range 3-20 nm. It was found that the size of the formed Si-QDs was dependent on the annealing temperature as well as the sublayer thickness. Columnar growth and evolution of wavy interface morphology was discussed.