Regensburg 2019 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 14: Poster
DS 14.3: Poster
Dienstag, 2. April 2019, 17:00–20:00, Poster E
Electric field induced quenching of photoluminescence in individual CH3NH3PbX3 (X=I, Br) nanocrystals — Ruiyun Chen1,2, •Jun Li1, Alexander Dobrovolsky1, Soranyel González-Carrero3, Marina Gerhard1, Vladimir Chirvony3,4, Julia Pérez-Prieto3, and Ivan Scheblykin1 — 1Division of Chemical Physics and NanoLund, Lund University, Lund 22362,Sweden — 2State Key Laboratory of Quantum Optics and Quantum Optics Devices,Institute of Laser Spectroscopy, Shanxi University, Taiyuan 030006,China — 3Instituto de Ciencia Molecular, Universidad de Valencia, c/Catedrático J. Beltrán, 2, Paterna 46980, Spain — 4UMDO (Unidad de Materiales y Dispositivos Optoelectrónicos), Instituto de Ciencia de los Materiales, Universidad de Valencia, Valencia 46071, Spain
Metal halide perovskites have attracted lots of attention because of extraordinary performance of these solution-processed materials in optoelectronics. However, the even higher efficiency and much better stability are wanted for their practical applications. Therefore, a deeper physical understanding of the charge carrier dynamics and the ion migration in the perovskite semiconductors are required to overcome these limitations. Here, we found that the external alternating electric field(EF) quenches the photoluminescence(PL) of individual CH3NH3PbX3(X=I,Br) nanocrystals. After switching off the alternating EF, the PL intensity recovered within several minutes. However, constant EF showed very little quenching effect compared with alternating. The physical mechanism behind this will be discussed.