Regensburg 2019 – scientific programme
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DS: Fachverband Dünne Schichten
DS 14: Poster
DS 14.40: Poster
Tuesday, April 2, 2019, 17:00–20:00, Poster E
Using Tunnelling Spectroscopy to Monitor Changes in the Electronic Structure of Chalcogenide Thin Films Occurring by Tuning their Electronic Properties — •Lisa Metzner1, Johannes Reindl1, and Matthias Wuttig1,2 — 1I. Physikalisches Institut (IA), RWTH Aachen University, 52056 Aachen, Germany — 2JARA - FIT, RWTH Aachen University, Germany
Phase change materials (PCM) possess some unique physical properties, which make them well suited candidates for the integration in novel data storage technology, like the recently presented 3D XPoint memory. In such devices, the large contrast in electrical resistivity between stable amorphous and crystalline phases, switched by electrical pulses on a nanosecond timescale, is exploited.
In addition to this extraordinary mechanism, in the material class of chalcogenides, to which the PCM belong, many compounds with other interesting physical properties such as good thermoelectrics, topological insulators or superconductors can be found. In these materials, methods like alloying or thermal annealing provide means for tuning their electronic structure and properties, such as n-p transitions or band gap engineering.
In order to quantify these changes in the electronic structure of the materials, the electronic density of states (DOS) around the Fermi level is a crucial physical property. This quantity can be determined by tunnelling spectroscopy. Therefore, here we present measurements performed on tunnel junctions of PbXTe components, which were produced by in-situ sputter deposition.