Regensburg 2019 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 14: Poster

DS 14.41: Poster

Dienstag, 2. April 2019, 17:00–20:00, Poster E

Investigation of bipolar resistive switching mechanisms in amorphous and crystalline Ge₂Sb₂Te₅ using different electrode materials — •Hagen Bryja, Mario Behrens, Andriy Lotnyk, and Bernd Rauschenbach — Leibniz Institute of Surface Engineering (IOM), Permoserstraße 15, 04318 Leipzig, Germany

Electric-field-induced resistive random-access memory has received much attention as candidate for next-generation non-volatile memory applications due to its fast switching, simple structure and low power consumption. Chalcogenide-based phase change alloy Ge₂Sb₂Te₅ (GST) has shown promising properties for such memory devices, since its switching mechanism relies on either ionic migration or pure electronic effects.

Here, the influence of the electrode material and solid phase of GST on bipolar resistive switching was investigated. For this, Pt/GST/Cr and Ag/GST/Cr memory cells were both prepared using pulsed laser deposited amorphous or crystalline GST. Transmission electron microscopy investigations and detailed analysis of the current-voltage characteristics are presented. In the case of Pt/GST/Cr the resistive switching arises from a pure space-charge limited conduction (SCLC) mechanism, whereas Ag/GST/Cr shows a combination of SCLC with electrochemical metallization effects. For both cells it was found that the magnitude of the resistance and the high/low resistance ratio are significantly affected by the solid phase of GST. Furthermore, application-related properties such as multi-state capability, endurance and retention time were compared.