Regensburg 2019 – scientific programme

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DS: Fachverband Dünne Schichten

DS 14: Poster

DS 14.44: Poster

Tuesday, April 2, 2019, 17:00–20:00, Poster E

Electronic Noise in Hafnium and Yttrium Oxide-Based RRAM Devices — •Martin Lonsky¹, Eszter Piros², Stefan Petzold², Eric Jalaguier³, Emmanuel Nolot³, Christelle Charpin³, Christian Wenger⁴, Lambert Alff², and Jens Müller¹ — ¹Institute of Physics, Goethe-University Frankfurt, Frankfurt am Main, Germany — ²Institute of Materials Science, Technical University Darmstadt, Darmstadt, Germany — ³CEA, LETI, Minnatec Campus, Grenoble, France — ⁴IHP GmbH, Leibniz-Institut für innovative Mikroelektronik, Frankfurt (Oder), Germany

Resistive random access memory (RRAM) devices have attracted great attention due to their potential to be applied as a reliable, fast and high-density non-volatile data storage solution. Here, we present a study on transition metal oxide-based devices, in which the mechanism of resistive switching is related to the formation and rupture of oxygen-deficient conducting filaments in the oxide layer. Up until today, the exact mechanisms of charge transport and their dependence on various parameters are not yet fully understood. In this context, a better and more detailed physical picture would yield strong benefits with regard to the fabrication of more reliable and efficient devices. Therefore, we compared HfO₂- and Y₂O₃-based memory cells by employing fluctuation spectroscopy, which is a powerful method to study the charge carrier dynamics in RRAMs. For hafnium oxide-based devices, the electronic noise exhibits clear signatures of trap-assisted tunneling processes, whereas for yttrium oxide-based samples our results suggest a different charge transport mechanism to be predominant.