Regensburg 2019 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 14: Poster
DS 14.47: Poster
Dienstag, 2. April 2019, 17:00–20:00, Poster E
Study of Resistive Switching on La0.3Ca0.7MnO3/YBa2Cu3O7-δ Bilayers Deposited by Sputtering DC — John Betancourt1,2, Jhon E. Ordoñez1, Carlos W. Sanchez1, Wilson Lopera1, •Katherine Gross1, and Maria E. Gómez1,2 — 1Thin films group, Universidad del Valle, Cali, Colombia — 2Centro de Excelencia en Nuevos Materiales, CENM
Devices based on phenomenon of resistive random access memory (RRAM) have been studied on different transition metal oxides. In this materials the favorable properties as low power consumption, simplicity, long retention time and even multilevel switching are very important. We have deposited La0.3Ca0.7MnO3 (LCMO) films on YBa2Cu3O7-δ (YBCO)/ SrTiO3 (STO) to study the resistive switching on complex oxide. In this case, LCMO (t= 60, 30 and 15 nm) was used like insulator material in contact with a fixed YBCO layer (t= 60 nm) as a bottom electrode. From XRD we found that the LCMO and YBCO layers growth textured aligned with substrate. The electrical properties with temperature using Ag like top electrode indicated the insulator and metal behavior of LCMO and YBCO respectively. The I-V curves allow us investigate the hysteretic response and the presence of two resistive states at room temperature and associated with electrical transport mechanisms like space charge limited conduction (SCLC). Finally, the resistance switching with applied voltage tests were performed indicating a relation between the thicknesses of the LCMO layer with the HRS/LRS ratio.