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DS: Fachverband Dünne Schichten

DS 14: Poster

DS 14.52: Poster

Dienstag, 2. April 2019, 17:00–20:00, Poster E

Reactive Metal-Organic Interfaces Studied with HAXPES: Modify Reaction Depth and Interphase Formation — •Stefan Renato Kachel, Martin Schmid, Benedikt P. Klein, Nicolas Bock, and J. Michael Gottfried — Fachbereich Chemie, Philipps-Universität Marburg, Germany

Interfaces between organic semiconductors and metallic layers are ubiquitous in organic electronic devices and can significantly influence device functionality. The vapor deposition of a metal onto an organic layer is often followed by a diffusion of the metal atoms into the organic layers. These metal atoms can react with the organic molecules forming a reacted interphase instead of an abrupt interface. A versatile technique for the quantitative characterization of these interphase layers is the hard X-ray photoelectron spectroscopy (HAXPES), which allows for non-destructive chemical depth profiling and chemical analysis across the interphase region. Here we studied two different systems, the reactive calcium on α-sexithiophene (6T) and less reactive cobalt on 2H-tetraphenylporphyrin (2HTPP) system. In order to gain control over the thickness of the interphase layer, we varied process parameters such as sample temperature and metal atom flux during interphase preparation. We found that the temperature of the organic film during metal deposition was the only parameter that significantly influenced the formation of the interphase layer by nearly a factor of 2 independent of the system. Furthermore we observed a higher reaction depth and a complex diffusion mechanism for the Ca/6T system.