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DS: Fachverband Dünne Schichten

DS 14: Poster

DS 14.56: Poster

Dienstag, 2. April 2019, 17:00–20:00, Poster E

Laterally structured dielectrics by area-selective atomic-layer-deposition — •Daniel Anders, Philip Klement, Fabian Michel, Jörg Schörmann, and Sangam Chatterjee — Institute of Experimental Physics I and Center for Materials Research (ZfM), Justus-Liebig-University Giessen, D-35392 Giessen, Germany

Industrial semiconductor manufacturing combines lithography, etching, and deposition processes to create (opto-) electronic devices. The quest for miniaturization of those devices has led to complex fabrication processes with multiple patterning and etching steps to achieve area-select deposition. However, for more advanced technology a tool must deposit different combinations of materials area-selectively. Atomic-layer-deposition (ALD) is a technique for depositing high-quality, ultrathin films of dielectrics with the potential of area-selective deposition that could reduce the number of manufacturing steps and allow for advanced structures. Here, we demonstrate the successful direct patterned deposition of TiO₂ on SiO₂ creating smooth surfaces of alternating dielectrics. A combination of electron beam lithography using a PMMA mask, ion beam etching, plasma treatment and ALD enables a patterned deposition. Several process parameters were varied, and their effect on the resulting structure was investigated by atomic force microscopy, scanning electron microscopy, and X-ray photoelectron spectroscopy. We find that a number of factors must be considered in design, patterning, and deposition to achieve reproducible results. Our work enables the realization of lateral heterostructures as central building blocks for advanced technology applications.