Regensburg 2019 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 15: Focus Session: Direct-Write Nanofabrication and Applications I
(Electron Beam Induced Processing) (joint session DS/TT)
DS 15.8: Vortrag
Mittwoch, 3. April 2019, 12:00–12:15, H32
Atomic layer deposition on electron beam written nanostructures — Caspar Haverkamp1, Hanno Kröncke1, Patryk Kusch2, Felix Oertel1, Catherine Dubourdieu1,3, Stephanie Reich2, and •Katja Höflich1 — 1Helmholtz-Zentrum Berlin, Hahn-Meitner-Platz 1, 14109 Berlin — 2Freie Universität Berlin, Fachbereich Physik, Arnimallee 14, 14195 Berlin — 3Freie Universität Berlin, Institut für Chemie und Biochemie, Takustr. 3, 14195 Berlin
The uniform coverage of complex three-dimensional structures is highly beneficial for the process of direct electron beam writing. Thereby, crucial issues in thermal and chemical stability of electron beam written structures can be successfully addressed, while in other cases the desired material response may be realized. Atomic layer deposition (ALD) is a self-limited deposition technique, that allows to deposit conformal ultrathin films on surfaces. The deposition consists of an iterative growth sequence of four steps. First, precursor molecules bind to the surface forming a monolayer. Then, excess precursor molecules and volatile byproducts are purged from the reactor. In a third step, the co-reactant is introduced to react with the chemisorbed precursor molecules. Finally, all volatile products are purged again. While mostly known for the deposition of oxides, other materials and especially metals are available for ALD as well. Therewith, atomic layer deposition constitutes an ideal counterpart to trigger various applications of direct electron beam writing. Examples are demonstrated for plasmonic antennas of different types, optimized for chiroptical interaction, tip-enhanced Raman scattering or nonlinear interactions.