Regensburg 2019 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 2: Focus Session: Oxide Semiconductors for Novel Devices (joint session HL/DS)

Montag, 1. April 2019, 09:30–12:45, H34

The class of semiconducting oxides materials is currently investigated in terms of promising applications in devices, including low temperature processed amorphous thin films for bendable electronics and display technology as well as highly crystalline materials such as the wide band group-III sesquioxides. Possible devices applications are UV and DUV photo sensors, power electronics and even memristors. This session sets a focus on physical properties of semiconductor oxide materials, their growth methods and heterostructures for demonstrator devices.

Organizers: Holger Eisele (TU Berlin) and Holger von Wenckstern (Uni Leipzig)

	09:30	DS 2.1	Hauptvortrag: The role of suboxide kinetics and thermodynamics for the catalysis and facet formation during the molecular beam epitaxy of oxides — •Oliver Bierwagen
	10:00	DS 2.2	Hauptvortrag: Is There a Perspective of p-type Doping in Gallium Oxide? — •David Rogers, Ferechteh Teherani, Philippe Bove, Eric Sandana, Ryan McClintock, and Manijeh Razeghi
	10:30	DS 2.3	Hauptvortrag: Highly rectifying contacts on Ga2O3, In2O3 and (In,Ga)2O3 thin films — •Daniel Splith
	11:00		15 min. break
	11:15	DS 2.4	Hauptvortrag: Understanding the impact of vibrations and defects on the optical properties of phosphors — •P. Erhart, C. Linderälv, D Åberg, Y.-C. Lin, M Bettinelli, N. C. George, S. F. Parker, and M. Karlsson
	11:45	DS 2.5	Hauptvortrag: atomically resolved termination engineering of electronic states at oxide semiconductors — •Ya-Ping Chiu
	12:15	DS 2.6	Hauptvortrag: Nanoscale Control of Native Point Defects and Doping in Oxide Semiconductors — •Leonard Brillson