Regensburg 2019 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 2: Focus Session: Oxide Semiconductors for Novel Devices (joint session HL/DS)
DS 2.2: Hauptvortrag
Montag, 1. April 2019, 10:00–10:30, H34
Is There a Perspective of p-type Doping in Gallium Oxide? — •David Rogers1, Ferechteh Teherani1, Philippe Bove1, Eric Sandana1, Ryan McClintock2, and Manijeh Razeghi2 — 1Nanovation, 8 Route de Chevreuse, 78117 Chateaufort, Francenh — 2Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL60208, US
Recently, there has been a surge in interest for the ultra wide bandgap semiconductor Ga2O3. Key drivers for this are that bulk β-Ga2O3 wafers have become commercially available and that a variety of film growth methods have been shown to give n-type doping control. A major drawback associated with Ga2O3, however, has been lack of a method for fabricating p-type material. Indeed, it is generally proposed that p-type doping is unlikely to be obtained because of a combination of factors including the relatively low energy level of the valence band, the lack of an identified shallow acceptor, the relatively high effective masses of holes at the top of the valence band, the propensity for self-trapping of holes and the comparatively low formation energy of the oxygen vacancy donor (which favors compensation of acceptors). Recently, however, Chikoidze et al. [1] and Razeghi et al. [2] independently presented direct evidence of majority p-type conduction Ga2O3. The former concerned nominally undoped layers grown by PLD and the latter concerned Si doped layers grown by MOCVD. In this talk we will give an overview of these results. [1] Chikoidze et al. Materials Today Physics 3 (2017) [2] Razeghi et al., Photonics West, Feb (2018)