Regensburg 2019 – scientific programme

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DS: Fachverband Dünne Schichten

DS 2: Focus Session: Oxide Semiconductors for Novel Devices (joint session HL/DS)

DS 2.3: Invited Talk

Monday, April 1, 2019, 10:30–11:00, H34

Highly rectifying contacts on Ga₂O₃, In₂O₃ and (In,Ga)₂O₃ thin films — •Daniel Splith — Felix-Bloch-Institut für Festkörperphysik, Universität Leipzig, Germany

Oxide semiconductors like gallium oxide or indium oxide are promising materials for a new generation of transparent electronic devices. Additionally, alloying both materials allows band-gap engineering, enabling e. g. the fabrication of wave-length selective photodetectors. In order to realize devices like diodes, field-effect transistors and photodetectors, the fabrication of rectifying contacts is essential. Further, such contacts also enable the investigation of the materials by means of space charge region based methods like thermal admittance spectroscopy.

In this contribution the properties of Schottky contacts and pn-heterojunctions on heteroepitaxial Ga₂O₃ and In₂O₃ thin films grown by pulsed laser deposition are discussed. Additionally, the properties of such rectifying contacts on (In,Ga)₂O₃ thin films having a lateral composition gradient are presented. In order to improve the rectification of the contacts, different vertical layouts were investigated. Further, a comprehensive model, taking into account thermionic emission, thermionic field emission and charging currents as well as non-idealities like barrier height inhomogeneities, current spreading and variations of the net-doping density in growth direction, was employed in order to understand the measured characteristics.