Regensburg 2019 – scientific programme

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DS: Fachverband Dünne Schichten

DS 2: Focus Session: Oxide Semiconductors for Novel Devices (joint session HL/DS)

DS 2.5: Invited Talk

Monday, April 1, 2019, 11:45–12:15, H34

atomically resolved termination engineering of electronic states at oxide semiconductors — •Ya-Ping Chiu — Department of Physics, National Taiwan University, Taipei, Taiwan

Termination engineering at oxide semiconductors has become highly attractive for next-generation electronic and spintronic devices due to a delicate interplay of different correlated processes including orbital, charge, and magnetic ordering as well as lattice degrees of freedom at the interfaces. Therefore, to achieve a detailed physical understanding of such exotic phenomena at oxide interfaces becomes important. Only with such detailed high resolution experimental data, will it be possible to explore the relevance of the different physical models. In our studies, cross-sectional scanning tunneling microscopy and spectroscopy is employed to provide direct experimental insight into the origin and the natural evolution of the electronic properties with atomic precision across the heterointerfaces. In this talk, topics to be discussed include ferromagnetic/superconducting and multiferroic/ferromagnetic heterointerfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states, which is useful in understanding the intriguing interface properties in oxide semiconductors and providing a lot of insights for these communities. [1-3] Selected references: 1.*ACS nano, 12 (2), 1089 (2018). 2. Phys. Rev. Lett., 109, 246807 (2012). 3. Adv. Mater., 23, 1530 (2011).