Regensburg 2019 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 21: Focus Session: Growth, Properties and Application of Epitaxial Graphene (joint session DS/HL/O)

Donnerstag, 4. April 2019, 09:30–12:45, H32

Graphene is the only 2D material, which up to now can be grown almost defect-free on large scales. The application of epitaxial concepts has turned out as a breakthrough in graphene research, because it provides control over the interface and surface structure of epitaxial graphene (EG) layers with atom-scale precision and in an efficient and technologically compatible way. A wide variety of physical phenomena have been observed in graphene-based structures, including topologically protected states, high charge carrier mobility, electron correlation or superconductivity. This versatility makes EG an ideal platform for the integration of graphene-based structures into electronic applications.

This Focus Session aims at fostering the cooperation between groups working in the field of the synthesis, characterization and integration of systems based on large, structurally well-ordered graphene layers. For this purpose it collects state-of-the-art contributions to all involved aspects of EG research, from the growth, functionalization and characterization to the integration of EG-based materials.

Organizers:
• Sibylle Gemming, Institut für Physik, TU Chemnitz, D-09107 Chemnitz
• Christoph Tegenkamp, Institut für Physik, TU Chemnitz, D-09107 Chemnitz

	09:30	DS 21.1	Hauptvortrag: Epitaxial graphene on SiC(0001) studied by electron spectroscopy and microscopy — •Florian Speck
	10:00	DS 21.2	Uniform large-scale quasi-freestanding monolayer and bilayer graphene on SiC — Davood Momeni Pakdehi, •Klaus Pierz, Stefan Wundrack, Johannes Aprojanz, T.T. Nhung Nguyen, Thorsten Dziomba, Frank Hohls, Andrey Bakin, Rainer Stosch, Christoph Tegenkamp, Franz J Ahlers, and Hans. W. Schumacher
	10:15	DS 21.3	The contribution has been moved to TT 14.12.
	10:30	DS 21.4	Tuning the doping level of graphene near the Van Hove singularity via ytterbium intercalation — •Hrag Karakachian, Philipp Rosenzweig, Stefan Link, Kathrin Müller, and Ulrich Starke
	10:45	DS 21.5	Substrate induced nanoscale resistance variation in epitaxial graphene — •Anna Sinterhauf, Georg A. Traeger, Davood Momeni Pakdehi, Philip Schädlich, Florian Speck, Philip Willke, Thomas Seyller, Christoph Tegenkamp, Klaus Pierz, Hans Werner Schumacher, and Martin Wenderoth
	11:00		15 min. break.
	11:15	DS 21.6	Hauptvortrag: Patternable non-polar epigraphene for nanoelectronics and Dirac point physics — Vladimir Prudkovskiy, Yiran Hu, Hue Hu, Lei Ma, Claire Berger, and •Walt de Heer
	11:45	DS 21.7	Epitaxial growth of ferromagnetic semiconducting CrBr3 monolayer — •Weijiong Chen, Zeyuan Sun, Lehua Gu, Shiwei Wu, and Chunlei Gao
	12:00	DS 21.8	Tuning the electronic properties of PbPb molecules by epitaxial graphene — •T.T.Nhung Nguyen, U. Gerstmann, T.N.Ha Nguyen, and C. Tegenkamp
	12:15	DS 21.9	Hauptvortrag: Intrinsic stacking domains in graphene on silicon carbide: A pathway for intercalation — Tobias A de Jong, Eugene E Krasovskii, Christian Ott, Rudolf M Tromp, Sense Jan van der Molen, and •Johannes Jobst