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DS: Fachverband Dünne Schichten

DS 21: Focus Session: Growth, Properties and Application of Epitaxial Graphene (joint session DS/HL/O)

DS 21.1: Hauptvortrag

Donnerstag, 4. April 2019, 09:30–10:00, H32

Epitaxial graphene on SiC(0001) studied by electron spectroscopy and microscopy — •Florian Speck — Professur für Technische Physik, TU Chemnitz, Reichenhainer Str. 70, D-09126 Chemnitz, Germany

The growth of epitaxial graphene (EG) on silicon carbide (SiC) by sublimation of silicon in an inert atmosphere has received considerable attention due to its scalability up to wafer size, and over the past years, the homogeneity of the graphene films could be significantly enhanced by a polymer assisted growth process [1]. Intricate transfer procedures can be dispensed with when semi-insulating SiC substrates are used, facilitating the use of EG in electronics. Yet, interfaces to other materials and the presence of a substrate can affect the graphene layers, e.g. with respect to their structural and electronic properties. As will be shown in this talk, EG grown on SiC(0001) constitutes an intriguing model system to study such interactions due to diverse possibilities of manipulating its properties for instance by intercalation of different elements at the interface to the substrate. To this end, we employ mainly surface science methods such as electron spectroscopies, low-energy electron diffraction and microscopy. Discussed topics include doping of EG induced by hexagonal SiC polytypes, interface modification by means of intercalation, dislocations in EG and investigations of graphene prepared by polymer assisted growth.

[1] M. Kruskopf et al., 2D Mater. 3, 041002 (2016).