Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 21: Focus Session: Growth, Properties and Application of Epitaxial Graphene (joint session DS/HL/O)
DS 21.9: Hauptvortrag
Donnerstag, 4. April 2019, 12:15–12:45, H32
Intrinsic stacking domains in graphene on silicon carbide: A pathway for intercalation — Tobias A de Jong1, Eugene E Krasovskii2, Christian Ott3, Rudolf M Tromp4,1, Sense Jan van der Molen1, and •Johannes Jobst1 — 1Leiden Institute of Physics, Leiden, The Netherlands — 2Universidad del Pais Vasco, San Sebastián/Donostia, Spain — 3Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg, Erlangen, Germany — 4IBM T. J. Watson Research Center, Yorktown Heights, USA
Graphene on silicon carbide (SiC) bears great potential for future graphene electronic applications because it is available on the wafer scale and its properties can be custom tailored by inserting various atoms into the graphene/SiC interface. It remains unclear, however, how atoms can cross the impermeable graphene layer during this widely used intercalation process. Here we demonstrate that in contrast to the current consensus, graphene layers grown in argon atmosphere on SiC are not homogeneous, but instead are composed of domains of different crystallographic stacking as they have been observed in other systems. We show that these domains are the AB and AC versions of Bernal stacking, that they are intrinsically formed during growth and that dislocations between domains dominate the (de)intercalation dynamics of hydrogen. Tailoring the resulting dislocation networks, e.g., through substrate engineering, will increase the control over the intercalation process and could open a playground for topological and correlated electron phenomena on the wafer scale.